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| Semiconductor MSM6690 Semiconductor ROM Interface IC MSM6690 GENERAL DESCRIPTION The MSM6690 can drive three devices of 131,072 x 8-bit EPROM or Mask ROM. The MSM6690 contains a built-in internal address generator circuit and one external clock input that enables contiued serial read operations. The internal address counter is automatically incremented by one each read operation. The external serial address input allows 1,024 words to be addressed in the X-direction, and 1,024 words in the Y-direction. * ROM is selected through CS1, CS2 and CS3 pins. FEATURES * Capable of driving three devices of 1 Mbit EPROM * Capable of driving three devices of 1 Mbit Mask ROM * Supply voltage : Single 5 V * Package options : 42-pin plastic DIP (DIP42-P-600) (Product name: MSM6690RS) 44-pin plastic QFP (QFP44-P-910-2K) (Product name: MSM6690GS-2K) * Available combinations MSM6388/6588 + MSM6389/6587/6586 + MSM6690 + ROM MSM6688/6788/6789A + (MSM6684/6685) + MSM6690 + ROM Note: When driving the MSM6690 with the MSM6388 or the MSM6588, a serial register (MSM6389, MSM6688 or MSM6586) is required. In the case of the MSM6688, MSM6788 and MSM6789A, a playback system can be constructed without a serial register (MSM6684 or MSM6685). MSM6690 Semiconductor BLOCK DIAGRAM TEST TEST01 TEST02 DOUT VDD GND MULTIPLEXER A0 A6 A7 X-ADDRESS COUNTER Y-ADDRESS COUNTER LD CK 3 A16 LD CK X-ADDRESS REGISTER CK SADX SASX SADY SASY CK Y-ADDRESS REGISTER TAS RDCK CS3 CS2 CS CONTROLLER CS1 10 Sin Sin 10 CE2 CE3 D0 D7 Semiconductor MSM6690 PIN CONFIGURATION (TOP VIEW) DOUT TEST01 TEST02 TEST TAS RDCK A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 VDD SADX SADY SASX SASY CS3 CS2 CS1 A14 A13 A8 A9 A11 A10 CE2 CE3 D7 D6 D5 D4 D3 42-Pin Plastic DIP MSM6690 Semiconductor PIN CONFIGURATION (TOP VIEW) (Continued) 42 TEST02 41 TEST01 40 DOUT 37 SADX 36 SADY 35 SASX RDCK A16 A15 A12 A7 A6 A5 A4 A3 34 SASY 33 CS3 32 CS2 31 CS1 30 A14 29 A13 28 A8 27 A9 26 A11 25 A10 24 CE2 23 CE3 D7 22 43 TEST 44 TAS 39 VDD VDD 17 1 2 3 4 5 6 7 8 9 A2 10 A1 11 A0 12 D0 13 D1 14 D2 15 GND 16 D3 18 D4 19 D5 20 D6 21 44-Pin Plastic QFP 38 VDD Semiconductor MSM6690 PIN DESCRIPTIONS Symbol VDD GND SADX Type -- -- I Power Supply Ground (SERIAL ADDRESS) Starting X address. 1024 words are addressed, and 1024 address data can be input as serial data of 10 bit (AX0 to AX9) via SADX pin. SADY I (SERIAL ADDRESS) Starting Y address. 1024 words are addressed, and 1024 address data can be input as serial data of 10 bit (AY0 to AY9) via SADY pin. SASX SASY TAS I I I (SERIAL ADDRESS STROBE) Clock to load X address's serial address data to internal register. (SERIAL ADDRESS STROBE) Clock to load Y address's serial address data to internal register. (TRANSFER ADDRESS STROBE) Serial address data loaded in address register, to internal address counter. X address and Y address data are loaded at fall of TAS pin. RDCK I (READ CLOCK) Clock to read data in data register. Internal operation starts on falling edge of RDCK, and data in the data register is output via DOUT pin. And internal address counter is automatically incremented by one due to the falling of RDCK. DOUT O (DATA OUT) In case CS1, CS2 and CS3 are all at "H" level, or RDCK is at "H" level data output pin is always at high impedance state. When "H" level data or "L" level data is read out, output pin is set to "H" level or "L" level and its read data is kept until RDCK turns to "H" level. CS1 CS2 CS3 I (CHIP SELECT) Three ROMS selection. CS1 L H H H CS2 -- L H H CS3 -- -- L H CE2 H L H H CE3 H H L H Description When CS1, CS2 and CS3 are all set to "H" level, all input/output pins become disabled. By use of these pins, three ROM data output pins can be connected in parallel. CE2 CE3 A0 - A16 D0 - D7 TEST TEST01 TEST02 O I I O O (CHIP ENABLE) ROM enable. Connect it to ROM's CE. (ADDRESS OUT) ROM address. (DATA IN) ROM data. IC test. Input "L" level data. IC test. Set to open. MSM6690 Semiconductor ABSOLUTE MAXIMUM RATINGS Parameter Power Supply Voltage Input Voltage Output Voltage Input Current Output Current Storage Temperature Symbol VDD VI VO II IO TSTG -- Ta = 25C Typical: GND = 0 V Condition Rating -0.3 to +7.0 -0.3 to VDD+0.3 -0.3 to VDD+0.3 -10 to +10 -20 to +20 -55 to +150 Unit V V V mA mA C RECOMMENDED OPERATING CONDITIONS (GND = 0 V) Parameter Power Supply Voltage Operating Temperature Symbol VDD Top Range +3.0 to +6.0 -40 to +85 Unit V C ELECTRICAL CHARACTERISTICS DC Characteristics (VDD = 5.0 V 10%, GND = 0 V, Ta = -40 to +85C) Parameter "H" level Input Voltage "L" level Input Voltage "H" level Input Current "L" level Input Current 3-state Output Leak Current (with open drain output) "H" level Output Voltage "L" level Output Voltage Supply Current at Standby Supply Current at Operating Symbol VIH VIL IIH IIL IOZH IOZL V OH V OL I DS I DD Condition CMOS level input CMOS level input VIH = VDD VIL = GND VOH = VDD VOL = GND IOH = -5.0 mA IOL = 5.0 mA Output open VIH = VDD VIL = GND -- Min. 3.5 -0.3 -- -10 -- -10 2.4 GND -- -- Typ.* -- -- 0.01 -0.01 0.01 -0.01 4.2 0.24 0.1 -- Max. VDD+0.3 1.5 10 -- 10 -- VDD 0.5 100 2 Unit V V mA mA mA V V mA mA * Typical operation is with VDD = 5.0 V, Ta = 25C Semiconductor VDD VDD D0 27C1000 D7 A0 D7 A0 D7 A0 D7 A0 27C1000 27C1000 SAD SADX SADY SASX SASY TAS RDCK DOUT MSM6690 CS1 CS2 CS3 A16 A16 CE GND OE TEST01 TEST02 CE2 CE3 GND TEST A16 CE GND OE A16 CE GND OE VCC D0 PGM VPP VCC PGM D0 VPP VCC PGM D0 VPP APPLICATION CIRCUITS SAS TAS RWCK WE DI/O CS1 CS2 CS3 CS4 MSM6388 MSM6588 GND CS WE Example of application circuit where MSM6388/6588,a 1-Mbit serial register, and three 1-Mbit EPROMs are connected. MSM6690 AU/D TEST TEST TEST TEST VDD DIN TAS SAS SAD DOUT MSM6389 RWCK GND TEST MSM6690 VDD D0 27C1000 D7 A0 D7 A0 D7 A0 D7 A0 D7 A0 27C1000 27C1000 27C1000 SADX VDD VCC PGM VPP D0 VCC PGM VPP D0 VCCPGM D0 VPP VCC PGM VPP D0 SADY SAS TAS RWCK SADX SADY SASX SASY TAS RDCK DROM MSM6690 APPLICATION CIRCUITS (Continued) DOUT CS1 CS2 CS3 CS4 A16 A16 A16 CE GNDOE CE GNDOE TEST01 TEST02 CE2 CE3 GND TEST A16 CS1 CS2 CS3 A16 CE GNDOE CE GNDOE Example of application circuit where MSM6688/6789A and four 1-Mbit EPROMs are connected. Semiconductor MSM6688 MSM6789A GND |
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